Final Report FA2386-10-1-04063 High performance and highly reliable ZnO Thin Film Transistor fabricated by Atomic Layer Deposition for Next Generation Displays
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Transparent Oxide TFTs Fabricated by Atomic Layer Deposition(FA2386-11-1-114052)
Purpose and Background: In recent years, the application of zinc oxide (ZnO) thin films as an active channel layer in TFTs has become of great interest owing to their specific characteristics. ZnO is transparent in the visible wavelengths region because of its wide band gap (~3.37eV), and the ability to fabricate good quality films over large areas at low temperature suggests the compatibility ...
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